| سال | هفته | ID | Title | ApplNo | IPC | Applicant | Subgroup | زیر گروه | رشته | شرح | Description |
|---|
2026 | 05 | WO/2026/020622 | RAW MATERIAL FOR GROWTH OF SINGLE CRYSTAL OF SAMARIUM-DOPED LEAD MAGNESIUM NIOBATE-LEAD TITANATE AND PREPARATION METHOD THEREFOR | CN2024/127627 | C30B 29/30 | BEIJING SINOMA SYNTHETIC CRYSTALS CO., LTD. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 05 | WO/2026/023394 | COMPOSITE SUBSTRATE | JP2025/024396 | C30B 29/04 | NGK INSULATORS, LTD. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 05 | WO/2026/023511 | TITANIUM OXIDE CRYSTAL, METHOD FOR PRODUCING SAME, AND USE THEREOF | JP2025/025397 | C30B 29/16 | NATIONAL INSTITUTE FOR MATERIALS SCIENCE | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 05 | WO/2026/023599 | n-TYPE 4H-SiC SINGLE CRYSTAL INGOT, n-TYPE 4H-SiC SINGLE CRYSTAL WAFER, METHOD FOR PRODUCING n-TYPE 4H-SiC SINGLE CRYSTAL INGOT, AND METHOD FOR PRODUCING n-TYPE 4H-SiC SINGLE CRYSTAL WAFER | JP2025/025873 | C30B 29/36 | CENTRAL GLASS COMPANY, LIMITED | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 05 | WO/2026/023819 | METHOD FOR SELECTIVE GROWTH OF TMD AND SUBSTRATE HAVING SELECTIVELY GROWN TMD | KR2025/006810 | C30B 25/16 | TDS INNOVATION INC. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 05 | WO/2026/024419 | TEMPERATURE AND FILM ADJUSTMENTS FOR PROCESS CHAMBERS, AND RELATED SYSTEMS AND METHODS | US2025/035467 | C30B 25/10 | APPLIED MATERIALS, INC. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 05 | WO/2026/024442 | DISRUPTIVE FLOW PROTRUSIONS TO ADJUST FLOW, AND RELATED CHAMBER KITS, METHODS, AND PROCESSING CHAMBERS | US2025/036270 | C30B 25/14 | APPLIED MATERIALS, INC. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 05 | WO/2026/024809 | INGOT PULLER APPARATUS INCLUDING IN-SITU CABLE CLEANER | US2025/038806 | C30B 15/32 | GLOBALWAFERS CO., LTD. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 05 | WO/2026/024834 | CRUCIBLES WITH TRANSMISSION MODIFICATION AND METHODS FOR USING SUCH CRUCIBLES | US2025/038848 | C30B 15/10 | GLOBALWAFERS CO., LTD. | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی | 2026 | 05 | WO/2026/025008 | SYSTEMS AND METHODS FOR MODEL BASED LUMPED PARAMETER ESTIMATION OF AXIAL GRADIENTS IN MELT AND CRYSTAL AT THE GROWING INTERFACE | US2025/039210 | C30B 15/20 | GLOBALWAFERS CO., LTD | CHEMISTRY; METALLURGY | علم شیمی؛ متالورژی | متالوژی |